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gaas , phemt , mmic , medium power amplifier, 24 ghz to 35 ghz data sheet HMC1131 rev. a document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or paten t rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2015 analog devices, inc. all rights reserved. technical support www.analog.com features high s aturated output power (p sat ) : 25 dbm high output third - order intercept ( ip3 ) : 35 dbm high gain: 2 2 db (24 ghz to 27 ghz) high output power for 1 db compression ( p1db ) : 24 db m dc supply: 5 v at 225 ma compact 24 - lead, 4 mm 4 mm lcc package applications point - to - point r adios point - to - multipoint r adios vsat and satcom functional block dia gram 1 nic 2 gnd 3 rfin 4 gnd 5 nic 6 nic 18 nic 17 gnd 16 rfout 15 gnd 14 nic 13 nic 24 nic 23 v dd 1 22 v dd 2 21 v dd 3 20 v dd 4 19 nic 7 nic 8 v gg 1 9 nic 10 nic 11 v gg 2 12 nic 1.5k 1.5k HMC1131 package base 13105-001 figure 1. general description the hmc 1131 is a gallium arsenide ( gaas ), pseudomorphic high electron mobility transfer ( phemt ), monolithic microwave integrated circuit ( mmic ), driver amplifier that operates from 24 ghz to 35 ghz. the HMC1131 provides 2 2 db of gain at the 2 4 ghz to 27 ghz range , 35 dbm output ip3, and 24 dbm of output power at 1 db gain compression, while requiring 225 ma from a 5 v supply . the HMC1131 is capable of supplying 25 dbm of saturated output power and is housed i n a compact, 4 mm 4 mm cera mic leadless chip carrier (24 - lead lcc) . the HMC1131 is an ideal driver amplifier for a wide range of applications, including point - to - point radios, from 24 ghz to 35 ghz .
HMC1131* product page quick links last content update: 11/01/2016 comparable parts view a parametric search of comparable parts evaluation kits ? HMC1131 evaluation board documentation application notes ? an-1363: meeting biasing requirements of externally biased rf/microwave amplifiers with active bias controllers ? broadband biasing of amplifiers general application note ? mmic amplifier biasing procedure application note ? thermal management for surface mount components general application note data sheet ? HMC1131: gaas, phemt, mmic, medium power amplifier, 24 ghz to 35 ghz data sheet reference materials press ? medium-power driver amplifier delivers high gain and output power for easy integration in communications systems design resources ? HMC1131 material declaration ? pcn-pdn information ? quality and reliability ? symbols and footprints discussions view all HMC1131 engineerzone discussions sample and buy visit the product page to see pricing options technical support submit a technical question or find your regional support number * this page was dynamically generated by analog devices, inc. and inserted into this data sheet. note: dynamic changes to the content on this page does not constitute a change to the revision number of the product data sheet. this content may be frequently modified.
HMC1131 data sheet rev. a | page 2 of 14 table of contents features .............................................................................................. 1 ? applications ....................................................................................... 1 ? functional block diagram .............................................................. 1 ? general description ......................................................................... 1 ? revision history ............................................................................... 2 ? electrical specifications ................................................................... 3 ? 24 ghz to 27 ghz frequency range ......................................... 3 ? 27 ghz to 35 ghz frequency range ......................................... 3 ? absolute maximum ratings ............................................................ 4 ? esd caution...................................................................................4 ? pin configuration and function descriptions ..............................5 ? interface schematics .....................................................................6 ? typical performance characteristics ..............................................7 ? applications information .............................................................. 11 ? evaluation pcb ........................................................................... 12 ? typical application circuit ........................................................... 13 ? outline dimensions ....................................................................... 14 ? ordering guide .......................................................................... 14 ? revision history 9/15rev. 0 to rev. a changes to features section and general description section ........ 1 change to gain parameter, table 1 ................................................ 3 7/15revision 0: initial version
data sheet HMC1131 rev. a | page 3 of 14 electrical specifications 24 gh z to 27 gh z frequency range t a = 25 c, v dd 1 = v dd 2 = v dd 3 = v dd 4 = 5 v, i dd = 225 ma , unless otherwise stated. adjust v gg 1 and v gg 2 between ?2 v to 0 v to achieve i dd = 225 ma typical. table 1 . parameter symbol min typ max unit frequency range 24 27 ghz gain 18 2 2 db gain variation over temperature 0.031 db/c return loss input 8 db output 7 db output output power for 1 db compression p1db 20 23 dbm saturated output power p sat 27 dbm output third - order intercept 1 ip3 34 dbm supply current total supply current i dd 225 ma total supply current vs. v dd 2 4 v 5 v 1 measurement taken at p out /tone = 10 dbm. 2 the amplifier operates over the full voltage ranges sh own. v gg 1 and v gg 2 are adjusted to achieve i dd = 225 ma at 5 v. 27 gh z to 35 gh z frequency range t a = 25c, v dd 1 = v dd 2 = v dd 3 = v dd 4 = 5 v, i dd = 225 ma, unless otherwise stated. adjust v gg 1 and v gg 2 between ?2 v to 0 v to achieve i dd = 225 ma typical. table 2 . parameter symbol min typ max unit frequency range 27 35 ghz gain 18 20 db gain variation over temperature 0.031 db/c return loss input 8 db output 7 db output output power for 1 db compression p1db 21 24 dbm saturated output power p sat 25 dbm output third - order intercept 1 ip3 35 dbm supply current total supply current i dd 225 ma total supply current vs. v dd 2 4 v 5 v 1 measurement taken at p out /tone = 10 dbm. 2 the amplifier operates over the full voltage ranges shown. v gg 1 and v gg 2 are adjusted to achieve i dd = 225 ma at 5 v.
HMC1131 data sheet rev. a | page 4 of 14 absolute maximum rat ings table 3 . parameter rating drain bias voltage (v d d ) 5.5 v rf input power (rfin) 12 dbm channel temperature 175 c continuous power dissipation ( p diss ), t a = 85c (derate 22 mw/c) 1.97 w thermal resistance , r th ( junction to ground p ad dle ) 45.5c/w operating temperature ? 40 c to + 85c storage temperature ? 65 c to + 150c esd sensitivity , human body model (hbm) class 0, p assed 150 v maximum peak reflow temperature 260c stresses at or above those listed under absolute maximum ratings may cause permanent damage to the product. this is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. operation beyond the maximum operating conditions for extend ed periods may affect product reliability. esd caution
data sheet HMC1131 rev. a | page 5 of 14 pin configuration and fu nction descriptions 1 nic 2 gnd 3 rfin 4 gnd 5 nic 6 nic 18 nic 17 gnd 16 rfout 15 gnd 14 nic 13 nic 24 nic 23 v dd 1 22 v dd 2 21 v dd 3 20 v dd 4 19 nic 7 nic 8 v gg 1 9 nic 10 nic 11 v gg 2 12 nic HMC1131 top view (not to scale) notes 1. nic = not internally connected. 2. the exposed pad must be connected to rf/dc ground. 13105-100 figure 2. pin configuration table 4. pin function descriptions pin no. mnemonic description 1, 5 to 7, 9, 10, 12 to 14, 18, 19, 24 nic not internally connected. however, all data was measured with these pins connected to rf/dc ground externally. 2, 4, 15, 17 gnd ground. these pins must be connected to rf/dc ground. 3 rfin rf input. this pin is ac-coupled and matched to 50 . 8 v gg 1 gate bias pin for the first and second stages. external bypass capacitors of 100 pf, 10 nf, and 4.7 f are required for this pin. 11 v gg 2 gate bias pin for the third and fourth stages. external bypass capacitors of 100 pf, 10 nf, and 4.7 f are required for this pin. 16 rfout rf output. this pin is ac-coupled and matched to 50 . 20 to 23 v dd 4 to v dd 1 drain bias voltage pins. external bypass capacitors of 100 pf, 10 nf, and 4.7 f are required for these pins. epad exposed pad. the exposed pad must be connected to rf/dc ground.
HMC1131 data sheet rev. a | page 6 of 14 interface schematics 1.5k rfin 13105-025 figure 3 . rfin interface schematic gnd 13105-026 figure 4 . gnd interface schematic v gg 1, v gg 2 13105-027 figure 5. v gg 1/v gg 2 interface schematic 1.5k rfout 13105-028 figure 6 . rfout interface schematic v dd 1, v dd 2, v dd 3, v dd 4 13105-029 figure 7. v dd 1 to v dd 4 interface schematic
data sheet HMC1131 rev. a | page 7 of 14 typical performance characteristics 30 ?30 ?20 ?10 0 10 20 23 25 27 29 31 33 35 37 response (db) frequency (ghz) s22 s21 s11 13105-002 figure 8. response ( broadband gain and return loss ) vs. frequency 0 ?35 ?30 ?25 ?20 ?15 ?10 ?5 24 25 27 29 31 33 35 26 28 30 32 34 36 input return loss (db) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-003 figure 9 . input return loss vs. frequency at various temperatures 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p1db (dbm) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-004 figure 10 . p1db vs. frequency at various temperatures 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 gain (db) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-005 figure 11 . gain vs. frequency at various temperatures 0 ?35 ?30 ?25 ?20 ?15 ?10 ?5 24 25 27 29 31 33 35 26 28 30 32 34 36 output return loss (db) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-006 figure 12 . output return loss vs. frequency at various temperatures 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p1db (dbm) frequency (ghz) 5v 4v 13105-007 figure 13 . p1db vs. frequency at various supply voltage s
HMC1131 data sheet rev. a | page 8 of 14 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p sat (dbm) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-008 figure 14 . p sat vs. frequency at various temperatures 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p1db (dbm) frequency (ghz) 250ma 225ma 200ma 175ma 13105-009 figure 15 . p1db vs. frequency at various supply current s 40 20 22 24 26 28 30 32 34 36 38 24 25 27 29 31 33 35 26 28 30 32 34 36 output ip3 (dbm) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-010 figure 16 . output ip3 vs. frequency at various temperatures , p out /tone = 10 dbm 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p sat (dbm) frequency (ghz) 5v 4v 13105-0 1 1 figure 17 . p sat vs. frequency at various supply voltages 30 12 14 16 18 20 22 24 26 28 24 25 27 29 31 33 35 26 28 30 32 34 36 p sat (dbm) frequency (ghz) 250ma 225ma 200ma 175ma 13105-012 figure 18 . p sat vs. frequency at various supply currents 40 20 22 24 26 28 30 32 34 36 38 24 25 27 29 31 33 35 26 28 30 32 34 36 output ip3 (dbm) frequency (ghz) 250ma 225ma 200ma 175ma 13105-013 figure 19 . output ip3 vs. frequency at various supply currents , p out /tone = 10 dbm
data sheet HMC1131 rev. a | page 9 of 14 40 20 22 24 26 28 30 32 34 36 38 24 25 27 29 31 33 35 26 28 30 32 34 36 output ip3 (dbm) frequency (ghz) 5v 4v 13105-014 figure 20 . output ip3 vs. frequency for various supply voltage s, p out /tone = 10 dbm 70 60 50 40 30 20 4 8 12 16 6 10 14 output im3 (dbc) p out /tone (dbm) 34ghz 32ghz 30ghz 28ghz 13105-015 figure 21 . output third - order intermodulation ( im3 ) vs. p out /tone at v dd = 5 v 27 19 21 20 22 23 24 25 26 175 200 225 250 gain (db), p1db (dbm), p sat (dbm) i dd (ma) p1db gain p sat 13105-016 figure 22 . gain , p1db, and p sat vs. supply current (i dd ) at 30.5 ghz 70 60 50 40 30 20 4 8 12 16 6 10 14 output im3 (dbc) p out /tone (dbm) 34ghz 32ghz 30ghz 28ghz 13105-017 figure 23 . output third - order intermodulation (im3) vs. p out /tone at v dd = 4 v 30 25 20 15 10 5 0 400 370 340 310 280 250 220 ?15 ?11 ?7 ?3 1 5 9 ?13 ?9 ?5 ?1 3 7 p out (dbm), gain (db), pae (%) i dd (ma) input power (dbm) i dd gain pae p out 13105-018 figure 24 . power compression a t 30.5 ghz (pae is power added efficiency) 27 19 21 20 22 23 24 25 26 4.0 4.6 4.8 4.2 4.4 5.0 gain (db), p1db (dbm), p sat (dbm) v dd (v) p1db gain p sat 13105-019 figure 25 . gain, p1db, and p sat vs. supply voltage (v dd ) at 30.5 ghz
HMC1131 data sheet rev. a | page 10 of 14 0 ?60 ?50 ?40 ?30 ?20 ?10 24 25 27 29 31 33 35 26 28 30 32 34 36 reverse isolation (db) frequency (ghz) t a = ?40c t a = +25c t a = +85c 13105-020 figure 26 . reverse isolation vs. frequency at various temperatures 25 0 5 10 15 20 170 175 180 185 190 195 200 205 215 210 220 225 input ip3 (dbm) i dd (ma) 14dbm 10dbm 12dbm 13105-021 figure 27 . input ip3 vs. i d d over p out /tone at 30 ghz, v dd = 5 v, i dd = 225 ma, i dd2 = fixed, and i dd1 varied from 0 ma to 50 ma 2.0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?12 ?9 ?6 ?3 ?0 3 6 9 power dissipation (w) input power (dbm) 32ghz 33ghz 34ghz 30ghz 28ghz 27ghz 13105-022 figure 28 . power dissipation (p diss ) at 85c vs. input power for various frequencies 170 175 180 185 190 195 200 205 215 210 220 225 i dd (ma) 40 0 5 10 15 20 25 30 35 output ip3 (dbm) 14dbm 10dbm 12dbm 13105-023 figure 29 . output ip3 vs. i d d over p out /tone at 30 ghz, v dd = 5 v, i dd = 225 ma, i dd2 = fixed, and i dd1 varied from 0 ma to 50 ma 25 0 5 10 15 20 170 175 180 185 190 195 200 205 210 215 220 225 gain (db) i dd (ma) 13105-024 figure 30 . gain vs. i dd over p out /tone = 14 dbm at 30 ghz, v dd = 5 v, i dd = 225 ma, i dd2 = fixed, and i dd1 varied from 0 ma to50 ma
data sheet HMC1131 rev. a | page 11 of 14 application s i nformation the HMC1131 is a gaas , phemt , mmic , medium power amplifier consisting of four gain stages in series. v gg 1 is the gate bias pin for the first and second stages, while v gg 2 is the gate bias pin for the third and fourth stages. a simplified block diagram is shown in figure 31. all measurements for this device were taken using the e valuation printed circuit board ( pcb ) in its default configuration. unless otherwise noted, the v gg 1 , v gg 2 , and v dd 1 to v dd 4 pins were tied together during measurement , respectively . the following is the r ecommended bias sequen ce during power - u p : 1. connect to ground . 2. s et v gg 1 and v gg 2 to ? 2 v . 3. set v dd 1 through v dd 4 to 5 v . 4. i ncrease v gg 1 and v gg 2 to achieve a quiescent i dd = 225 ma . 5. apply the rf signal . the following is the recommended bias sequence during power - down: 1. turn the rf signal off . 2. d ecrease v gg 1 and v gg 2 to ?2 v to achieve a quiescent i dd = 0 ma (approximately) . 3. d ecrease v dd 1 through v dd 4 to 0 v . 4. i ncrease v gg 1 and v gg 2 to 0 v . the v dd x = 5 v and i dd = 225 ma b ias condition s are the operating point s recommended to optimize the overall performance. unless otherwise noted, the data shown was taken using the recommended bias condition s . operation of the HMC1131 at different bias conditions may result in performance that differ s from that shown in figure 27 and figure 30 . biasing the HMC1131 for higher drain current typically result s in high er p1db, oip3, and g ain but at the expense of increased power consumption. 13105-032 v dd 1 v dd 2 v gg 1 i dd 1 a i dd 1 b rfin v dd 3 v dd 4 v gg 2 i dd 2 a i dd 2 b rfout i dd 1 = i dd 1 a + i dd 1 b i dd 2 = i dd 2 a + i dd 2 b figure 31 . simplified block diagram
HMC1131 data sheet rev. a | page 12 of 14 evaluation pcb generate the evaluation pcb used in this application with proper rf circuit design techniques. signal lines at the rf port must have 50 ? impedance, and the package ground leads and exposed paddle must be connected directly to the ground plane similar to w hat is shown in figure 32 . use a sufficient number of via holes to connect the top and bottom ground planes. tp6 tp5 tp4 tp3 tp2 tp1 u1 + c21 + c20 + c19 + c18 + c17 + c16 + c15 c9 c8 c14 c13 c12 c11 c10 c7 c6 c5 c4 c3 c2 c1 vg1 vctrl vg2 vd4 vd3 vd2 vd1 thru cal rfout rfin 600-00145-00-1 tp7 13105-031 figure 32 . 600 - 00145 - 00 - 1 evaluation pcb bill of materials ale alatio boar m bill of materials item description manufacturer 1 j1, j2 pcb mount, k connector tp1 to tp7 dc pin c1 to c6 100 pf capacitors, 0402 package c 8 to c1 3 10000 pf capacitors, 0 402 package c1 5 to c 20 2.2 f capacitors, 0402 package u1 hmc 1131 l c4 analog devices, inc. pcb 600- 00145 -00 -1 evaluation board, rogers 4350 or arlon 25fr circuit board material 600- 00145 -00 -1 , analog devices, inc. 1 blank cells in the manufacturer column left blank intentionally for they are user selectable .
data sheet HMC1131 rev. a | page 13 of 14 typical application circuit 1 nic 2 gnd 3 rfin 4 gnd 5 nic 6 nic 18 nic 17 gnd 16 rfout 15 gnd 14 nic 13 nic 24 nic 23 v dd 1 22 v dd 2 21 v dd 3 20 v dd 4 19 nic 7 nic 8 v gg 1 9 nic 10 nic 11 v gg 2 12 nic 1.5k 1.5k HMC1131 v dd 1 c17 4.7f + c10 0.01f c3 100pf v dd 2 c15 4.7f + c8 0.01f c1 100pf v dd 4 v dd 3 c2 100pf + c9 0.01f c16 4.7f c4 100pf + c11 0.01f c18 4.7f v gg 1 c20 4.7f + c13 0.01f c6 100pf v gg 2 c5 100pf + c12 0.01f c19 4.7f rfin rfout 13105-030 figure 33 . typical application circuit
HMC1131 data sheet rev. a | page 14 of 14 outline dimensions 12 0.50 bsc 2.50 ref bottom view top view side view seating plane 1.02 max 2.50 sq 1 24 7 13 18 19 6 for proper connection of the exposed pad, refer to the pin configuration and function descriptions section of this data sheet. 04-03-2015-a 0.36 0.30 0.24 p i n 1 ( 0 . 3 2 0 . 3 2 ) exposed pad p kg-000000 pin 1 indicator 4.13 4.00 sq 3.87 3.10 bsc figure 34. 24-terminal cerami c leadless chip carrier [lcc] (he-24-1) dimensions shown in millimeters ordering guide model 1 temperature range msl rating 2 lead finish package description package option branding 3 HMC1131lc4 ?40c to +85c msl3 gold over nickel 24-terminal lcc he-24-1 xxxx 131h 1 HMC1131lc4tr ?40c to +85c msl3 gold over nickel 24-terminal lcc he-24-1 xxxx 131h 1 ev1HMC1131lc4 evaluation board 1 the HMC1131lc4 and the HMC1131l c4tr are rohs compliant. 2 see the absolute maximum ratings section. 3 xxxx is the 4-digit lot number. ?2015 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d13105-0-9/15(a)

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